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以SiH4,Ar和H2为反应气体,采用射频等离子体化学气相沉积方法在300℃下制备了低温多晶Si薄膜.实验发现,反应气体中H2的比例是影响薄膜结晶质量的重要因素,在适量的H2比例下制备的多晶Si薄膜具有结晶相体积分数高,氢含量低,生长速率快、抗杂质污染等特性.
Low-temperature polycrystalline Si thin films were prepared by RF plasma chemical vapor deposition at 300 ℃ using SiH4, Ar and H2 as reaction gases.The experiment found that the proportion of H2 in the reaction gas is an important factor affecting the crystallization quality of the films, H 2 ratio of polycrystalline Si thin films prepared with high crystalline volume fraction, low hydrogen content, fast growth rate, anti-impurity pollution and other characteristics.