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一般地说,晶体管的大功率运用,受到它的最大许可电压U_(CM)、最大许可电流I_(CM)及耗散功率P_(CM)的限制.晶体管制造者常把这三种限制归结成器件的极限运用参数,提供给用户.这三种极限运用参数在晶体管集电极电压和集电极电流所组成的平面上,构成了晶体管安全运用的区域.图1给出了这个区域(斜线部分).只有在这个区域内,才能保证晶体管安全工作;超出这一区域将会导致管子损坏.
In general, high-power transistors are limited by their maximum allowable voltage U CM, maximum permissible current I CM and dissipated power P CM Transistor manufacturers often attribute these three limitations to The device limits the use of parameters available to the user. These three limits apply the parameters in the transistor collector voltage and collector current of the plane formed by the safe use of the transistor area. Figure 1 shows this area (slash section Only in this area can transistors be safeguarded; going beyond this area will result in damage to the tube.