利用同步辐射光电子能谱技术研究了Gd在GaAs(10 0 )表面的吸附。当吸附厚度小于 0 47nm时 ,界面反应弱 ;在 0 47～ 0 9nm范围内 ,界面反应变得强烈 ;大于 0 9nm时 ,界面反应停止。在吸附过程中Gd 4 f首先是一单峰结构 ,随着Gd的增加 ,Gd 4 f演变为双峰结构。根据对实验数据的分析 ,认为Gd在反应层上以团簇的形式吸附 The adsorption of Gd on the GaAs (100) surface has been studied using synchrotron radiation photoelectron spectroscopy. When the adsorption thickness is less than 0 47nm, the interfacial reaction is weak; in the range of 0 47 ~ 0 9nm, the interfacial reaction becomes strong; when it is larger than 0 9nm, the interfacial reaction stops. During the adsorption process, Gd 4 f firstly has a unimodal structure. As Gd increases, Gd 4 f evolves into a bimodal structure. According to the analysis of the experimental data, it is considered that Gd adsorbs in the form of clusters on the reaction layer