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根据多晶硅薄膜氢化的微观机理 ,提出改进氢化效果的工艺方法 ,在不增加设备投资的情况下 ,采用该方法能够明显提高多晶硅薄膜的氢化效果 ,从而提高薄膜晶体管的性能 ,ION/IOFF从 10 3量级增加到 10 5量级 ,氢化工艺的处理时间也相应缩短。
According to the microscopic mechanism of hydrogenation of polycrystalline silicon thin film, a method of improving the hydrogenation effect is proposed. By using this method, the hydrogenation effect of the polycrystalline silicon film can be obviously improved and the performance of the thin film transistor can be improved. The order of magnitude increased to 10 5, the processing time of the hydrogenation process is also correspondingly shortened.