论文部分内容阅读
采用优化的多元醇制备工艺,以乙二醇为溶剂和还原剂,聚乙烯吡咯烷酮(PVP)为表面活性剂,CuCl_2为控制剂,合成了超长的Ag纳米线。利用旋涂工艺在玻璃基板上制作了透明的Ag纳米线薄膜电极,系统研究了退火温度和模压力对Ag纳米线电极透过率及导电性的影响。结果表明,当退火温度为200℃、压力5 MPa时,Ag纳米线在保持光线透过率损失很小的条件下薄膜阻值由3200Ω/□可优化至17Ω/□。薄膜电极导电能力的提高主要源于在较高退火温度和压力双重作用下纳米线外层包裹的PVP层的去除,实现了纳米线交叉点互焊与互联。研究了未处理和预处理工艺对Ag纳米线电极上沉积的ZnO纳米棒的形貌和场发射特性的影响。结果显示:经预处理的透明电极表面沉积的ZnO呈有序棒状排列,而未处理的样品展现出无序形貌;场发射测量显示纳米线电极预处理方法可有效降低ZnO纳米棒开启场强。
Adopting the optimized preparation technology of polyol, ethylene glycol as solvent and reducer, polyvinylpyrrolidone (PVP) as surfactant and CuCl 2 as control agent were synthesized, and the long Ag nanowires were synthesized. Transparent Ag nanowire thin film electrodes were fabricated on glass substrates by spin-coating. The effects of annealing temperature and mold pressure on the transmittance and conductivity of Ag nanowires electrodes were systematically investigated. The results show that when the annealing temperature is 200 ℃ and the pressure is 5 MPa, the thin film resistance can be optimized from 3200Ω / □ to 17Ω / □ under the condition of keeping the loss of light transmittance very small. The improvement of the conductivity of the thin film electrode is mainly due to the removal of the PVP layer wrapped by the outer nanowire under the dual action of higher annealing temperature and pressure, which realizes the mutual welding and interconnection of the nanowire cross points. The effects of untreated and pretreated processes on the morphology and field emission properties of ZnO nanorods deposited on Ag nanowire electrodes were investigated. The results show that ZnO deposited on the surface of the pretreatment transparent electrode has a ordered rod-like arrangement, while the untreated sample exhibits an unordered appearance. The field emission measurement shows that the nanowire electrode pretreatment method can effectively reduce the field strength of the ZnO nanorods .