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介绍了一种能对铋基焦绿石薄膜进行湿法刻蚀的有效方法,研究了HF,NH4F和HNO3的水溶液对铌酸锌铋(Bi1.5Zn1.0Nb1.5O7,BZN)和铌酸镁铋(Bi1.5MgNb1.5O7,BMN)两种铋基焦绿石薄膜的刻蚀情况。结果表明,刻蚀配比V(HF)∶m(NH4F)∶V(HNO3)∶V(H2O)为10mL∶3g∶10mL∶10mL时,BZN和BMN薄膜能得到有效刻蚀,刻蚀速率分别为7nm/s和4nm/s,图形刻蚀精度高。最后讨论了该刻蚀液对铋基焦绿石薄膜的刻蚀机理,加入NH4F作为络合剂能避免刻蚀过程中三氟化铋BiF3难溶沉淀物的生成,加入HNO3作为助溶剂可以调节刻蚀速率,从而提高湿法刻蚀的图形精度。
An effective method for the wet etching of bismuth-based pyrochlore thin films was introduced. The effects of aqueous solution of HF, NH4F and HNO3 on the corrosion resistance of bismuth zinc niobate (Bi1.5Zn1.0Nb1.5O7, BZN) and bismuth magnesium niobate Bi1.5MgNb1.5O7, BMN) etching of two bismuth-based pyrochlore thin films. The results show that BZN and BMN thin films can be effectively etched at etching rates of V (HF): m (NH4F): V (HNO3): V (H2O) 7nm / s and 4nm / s, high precision of pattern etching. Finally, the etching mechanism of bismuth-based pyrochlore thin film is discussed. Adding NH4F as a complexing agent can avoid the formation of BiF3-insoluble precipitates in the etching process. The addition of HNO3 as a co-solvent can adjust the etching Rate, thereby improving the accuracy of wet etching graphics.