新型P-/n-掺杂型共轭低聚物的合成及其光学和电化学性能研究

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通过Heck偶联法制备了一种新型P-/n-掺杂型电致发光材料--3-十二烷氧基噻吩一共-1,3,4-二唑共轭低聚物(P3DDOTV-OXD),用核磁共振氢谱(~1H NMR)及凝胶色谱(GPC)对其结构进行了分析表征.用紫外一可见光谱法(UV-Vis)、荧光光谱法及电化学分析法对其光学和电化学性能进行了研究.结果表明:P3DDOTV-OXD的蕈均分子量为:5287(四氢呋喃为流动相,聚苯乙烯为标准样品).在氯仿溶液中,P3DDOTV-OXD的紫外最大吸收波长为314 nm.在401 am处发射出明亮的蓝光;其最人发射波长较规整均聚物(HT P3DDOT)λ_(max)=516 nm)蓝移了115 nm.循环伏安测定结果表明:P3DDOTV-OXD在正、负向区域分别出现了氧化还原峰,电子亲和能(I_a)为2.88 eV,有利于电子从阴极的注入.3-十二烷氧基噻吩一共一嗯二唑共轭低聚物有望成为集空穴、电子双向传输为一体的新型光电功能材料.
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