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ZnO薄膜作为第三代半导体功能材料,高质量的p型掺杂是基于光电器件应用的关键。概述了ZnO薄膜V族元素氮、磷、砷(N、P、As)p型掺杂的研究进展,分析对比了3种元素的掺杂和p型转变特性,简单介绍了共掺杂技术,提出了有待进一步研究的问题。
As the third generation of semiconductor functional materials, ZnO thin films have high quality of p-type doping, which is the key to the application of optoelectronic devices. The research progress on the p-type doping of V, ZnO, arsenic (N, P, As) p-type ZnO thin films is summarized. The doping and p-type transition characteristics of the three elements are analyzed and compared. Put forward some questions to be further studied.