With the progress of ULSI technology, materials with low dielectric constant are required to replace Si02 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a promising material for the low dielectric constant and the process compatibility in existing technology. However, SiOF films are liable to absorb moisture when exposed to air. By treating the SiOF films with O2 plasma, it was found that the moisture resistibility of SiOF films was remarkably improved. The mechanism of the improvement in stability of dielectric constant was investigated. The results show that: 1) F atoms dissociated from the films and the bond angle of Si-O-Si decreased. 2) The plasma treatment enhanced the strength of Si-F bonds by removing unstable =SiF2 structures in the films. Resistibility of SiOF films in moisture was improved. With the progress of ULSI technology, materials with low dielectric constant are required to replace Si02 film as the interlayer to scale down the interconnection delay. Fluorinated Si oxide thin films (SiOF) are a promising material for the low dielectric constant and process compatibility in Existing technology. However, SiOF films are liable to absorb moisture when exposed to air. By treating the SiOF films with O2 plasma, it was found that the moisture resistibility of SiOF films was remarkably improved. The mechanism of the improvement in stability of dielectric constant was investigated. The results show that: 1) F plasma dissociated from the films and the bond angle of Si-O-Si decreased. 2) The plasma treatment enhanced the strength of Si-F bonds by removing unstable unstable = SiF2 structures in the films Resistibility of SiOF films in moisture was improved.