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利用作者提出的HEMT DCFL倒相器直流传输特性及瞬态特性计算机分析的模型,设计并制成了HEMT DCFL门电路及环形振荡器.在电路设计中,重点讨论了E/D NEMT倒相器的电路性能与器件的主要参数(栅长、栅宽、阈压)间的理论关系.工艺研究中,建立了挖栅时沟道饱和电流Is′与阈压值V_(t~h)间关系的理论曲线,并改进了传统化学湿法刻蚀工艺的阈压均匀性及E,D器件电流匹配的控制精度.实验制作了栅长为1μm的增强型和耗尽型HEMT.在1×1mm范围内,阈压偏差小于50mV,E/D倒相器的传输特性为:V_(OH)≈V_(DD),V_(OL)<0.1V,高、低电平转换范围仅0.1V,噪容达0.3V左右.研制的9级、17级环形振荡器,在V_(DD)为0.5V到3.5V范围内都观察到正弦波振荡波形.
In this paper, the HEMT DCFL gate and ring oscillator are designed and fabricated by using the model of HEMT DCFL inverter DC transmission and transient characteristics computer analysis. In the circuit design, the E / D NEMT inverter And the main parameters of the device (gate length, gate width, threshold voltage) are theoretically established.The relationship between the channel saturation current Is’ and the threshold voltage V_ (t ~ h) , And improves the threshold voltage uniformity and current control precision of E and D devices in traditional chemical wet etching process.The enhanced and depleted HEMT with gate length of 1μm is fabricated.The experimental results show that in 1 × 1mm The threshold voltage deviation is less than 50mV. The transmission characteristics of the E / D inverter are: V_ (OH) ≈V_ (DD), V_ (OL) <0.1V, high and low conversion range of only 0.1V, Tolerance of about 0.3 V. Developed 9, 17 ring oscillators, sine wave oscillation waveform was observed in the V DD range of 0.5V to 3.5V.