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提出了一种改进的集成雪崩光电二极管器件结构,由硅和锗材料的雪崩光电二极管结构集成,分别包含吸收区、电荷区和倍增区结构。该改进雪崩光电二极管对光线波长的探测范围扩展到200~1 400 nm。对雪崩光电二极管的关键参数,如器件内电场分布、暗电流、光电流、增益和光响应等进行了分析。仿真结果表明改进雪崩光电二极管的击穿电压为145 V。当阴极偏置电压为140 V时,该器件对900 nm波长光线的峰值响应可以达到22 A/W。在器件击穿之前,400 nm波长光线的电流增益可以对达到50。对改进雪崩光电二极管器件的工艺流程也进行了讨论。
An improved integrated avalanche photodiode device structure is proposed, which is composed of an avalanche photodiode structure of silicon and germanium materials, and includes an absorption area, a charge area and a multiplication area respectively. The improved avalanche photodiode extends the detection range of light wavelength to 200-1 400 nm. The key parameters of the avalanche photodiode, such as the electric field distribution in the device, dark current, photocurrent, gain and light response, are analyzed. The simulation results show that the breakdown voltage of the improved avalanche photodiode is 145V. When the cathode bias voltage is 140 V, the device’s peak response to 900 nm wavelength light can reach 22 A / W. Before the device breakdown, the current gain of 400 nm wavelength light can reach 50. The process of improving avalanche photodiode devices is also discussed.