论文部分内容阅读
,A novel structure of a high current gain 4H-SiC BJT with a buried layer in the base
【机 构】
：
State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Scienc
【出 处】
：
中国物理B（英文版）
【发表日期】
：
2009年9期
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