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串音与焦平面阵列(FPA)的灵敏度和分辨率密切相关.用模拟的方法定量地计算了In_(0.53) Ga_(0.47)As/InP探测器焦平面阵列的电串音随光波波长、入射方向和台面的刻蚀深度的变化情况.结果显示台面结构的器件的串音抑制性能比平面结构的要好.明显地发现短波长的光串音较小,正照射的串音比背照射要小,这是由材料吸收深度和异质结耗尽层宽度的影响造成的.另外,当台面的刻蚀深度穿透吸收层厚度时,其电串扰几乎完全被抑制.研究结果提出了相应的InGaAs FPA的低串音设计.
The crosstalk is closely related to the sensitivity and resolution of the FPA. The electrical crosstalk of the focal plane array of In_ (0.53) Ga_ (0.47) As / InP detectors is quantitatively calculated with the wavelength of light, Direction and the surface of the etching depth changes.The results show that the surface structure of the device crosstalk suppression performance is better than the plane structure.It is obvious that short-wavelength light crosstalk is small, positive radiation crosstalk is smaller than the back irradiation , Which is caused by the absorption depth of the material and the depletion layer width of the heterojunction.In addition, when the etching depth of the mesa penetrates the thickness of the absorption layer, the electrical crosstalk is almost completely suppressed.The results show that the corresponding InGaAs Low crosstalk design of FPA.