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光致发光影像PL Imaging技术应用在硅块检测方面已经开发出来,这项技术可以把掺硼铸锭硅块以高解析度,在极短时间内量测得到每一面的PL Imaging影像。这些影像按照体少子寿命(τbulk)变化进行分析,并且针对类稳态光导(QSSPC)及微波光导量测技术(μ-PCD)进行比较,证明可以作为硅块分析工具。我们证明在辐照均匀下的量测结果不仅符合光伏产业的一个太阳(One Sun)辐照条件,当量测结果具备平均注入条件,更得到一致体少子寿命值测试结果。
Photoluminescence Imaging PL Imaging technology has been developed for the detection of silicon blocks. This technology enables the measurement of PL Imaging on each side of boron-doped ingot silicon blocks with high resolution in a very short time. These images are analyzed in terms of tau bulbs and are compared to QSSPC and μ-PCD to demonstrate that they can be used as tools for analyzing silicon blocks. We show that the measurement under uniform irradiation not only conforms to One Sun irradiation conditions of the photovoltaic industry, but also provides the average injection conditions for the measurement results.