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宽禁带直接带隙半导体材料ZnO与GaN在晶体结构、晶格常数以及能带宽度等方面具有非常相似的特性。ZnO在高自由激子结合能(60meV)、适于湿法刻蚀以及对环境友好等方面具有优势,在短波长低阈值发光二极管(LED)以及激光二极管等方面具有广阔的应用前景[1]。但ZnO在稳定的p型掺杂方
Wide Bandgap Direct Bandgap Semiconductor materials ZnO and GaN have very similar properties in terms of crystal structure, lattice constant and bandgap. ZnO has advantages in high free exciton binding energy (60 meV), suitable for wet etching and environmental friendliness, and has broad application prospect in short wavelength low threshold light emitting diode (LED) and laser diode [1] . However, ZnO is a stable p-type dopant