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1983年南京固体器件研究所研制定型的GaAs FET,在频率高达12GHz时,有优良的微波性能。该器件的噪声系数最佳水平F_(min)≤1.5dB,已与近年来国际上同类产品的先进水平相当。此器件的研制成功,为制作卫星通讯中12GHz FET放大器解决了关键性器件。 WC60型GaAs FET是凹槽结构,栅长为0.5μm,采用1.8×1.8mm方形金属陶瓷管壳气密封装。该器件的典型“S”参数列于表1。
In 1983, Nanjing Institute of Solid State Devices developed a patterned GaAs FET with excellent microwave performance at frequencies up to 12 GHz. The best noise figure of the device is F_ (min) ≤1.5dB, which is comparable to the advanced level of similar products in the world in recent years. The successful development of this device solves the key components for making 12GHz FET amplifiers in satellite communications. The WC60 GaAs FET is a trench structure with a gate length of 0.5 μm and hermetically sealed with a 1.8 × 1.8 mm square cermet tube. The typical “S” parameters for this device are listed in Table 1.