Three kinds of oxide underlayers, namely SiO_2, ZnO and A1_2O_3, were deposited prior to the sputtering of Sr-ferrite films. respectively, in order to induce the optimum grain morphology and the texture of the films. A Sr-ferrite film with an easy axis in-plane orientation was induced by SiO_2 underlayer. In contrast, it prefers to be perpendicular to film plane for the cases of ZnO and A1_2O_3 underlayers. The optimum magnetic properties of the former film along film plane are: 4πMr=1.7 kG, _iH_c=5.35 kOe, and S_q=0.59, which are mainly dominated by the exchange coupling effect, determined by Wohlfarth’s remanence analysis. among grains. While those for the films with an easy axis perpendicular to film plane can be as high as 4πM_r=3.72 kG, _iH_c=6.42 kOe, and S_q=0.82, which are mainly dominated by the magnetostatic interaction among grains. Three kinds of oxide underlayers, namely SiO 2, ZnO and Al 2 O 3, were deposited prior to the sputtering of Sr-ferrite films. Respectively, in order to induce the optimum grain morphology and the texture of the films. A Sr-ferrite film with an easy axis in-plane orientation was induced by SiO_2 underlayer. In contrast, it prefers to be perpendicular to the film plane for the cases of ZnO and A1_2O_3 underlayers. The optimum magnetic properties of the former film along the film plane are: 4πMr = 1.7 kG, _iH_c = 5.35 kOe, and S_q = 0.59, which are mainly dominated by the exchange coupling effect, determined by Wohlfarth’s remanence analysis. Among grains. While those for the films with an easy axis perpendicular to the film plane can be as high as 4πM_r = 3.72 kG , _iH_c = 6.42 kOe, and S_q = 0.82, which are mainly dominated by the magnetostatic interaction among grains.