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The evolution of the recrystallization phase in amorphous 6H-SiC formed by He implantation followed by thermal annealing is investigated.Microstructures of recrystallized layers in 15keV He+ ion implanted 6H-SiC (0001)wafers are characterized by means of cross-sectional transmission electron microscopy (XTEM) and high-resolution TEM.Epitaxial recrystallization of buried amorphous layers is observed at an annealing temperature of 900℃.The recrystallization region contains a 3C-SiC structure and a 6H-SiC structure with different crystalline orientations.A high density of lattice defects is observed at the interface of different phases and in the periphery of He bubbles.With increasing annealing to 1000℃,3C-SiC and columnar epitaxial growth 6H-SiC become unstable,instead of [0001] orientated 6H-SiC.In addition,the density of lattice defects increases slightly with increasing annealing.The possible mechanisms for explanation are also discussed.