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目前研究准弹道输运纳米MOSFET散粒噪声的抑制时,采取了完全不考虑其抑制,或只强调抑制的存在而并未给出抑制公式的方式进行研究.本文基于Navid模型推导了准弹道输运纳米MOSEET散粒噪声,并得到了其在费米作用、库仑作用和二者共同作用三种情形下的抑制因子.在此基础上,对各抑制因子随源漏电压、栅极电压、温度及源漏掺杂浓度的变化特性进行了研究.两者共同作用的抑制因子随源漏电压和栅极电压变化特性与文献中给出的实验结论相符合,从而对实验上得到两者共同作用下的抑制因子随源漏电压和栅极电压的变化特性给出了理论解释.
At present, when we study the suppression of the shot noise of quasi-ballistic transport nano-MOSFET, we take the mode that no inhibition is given at all, or only the suppression is emphasized, but no inhibition formula is given.In this paper, the quasi-ballistic transport And the inhibitory factor under the three conditions of Fermi action, Coulomb action and the combined action of the two is obtained.On this basis, the inhibition factors of each inhibitor with the source-drain voltage, the gate voltage, the temperature And source-drain doping concentration were studied.The inhibitory factors acting as a function of source-drain voltage and gate voltage were in good agreement with the experimental conclusions given in the literature, Under the suppression factor with source and drain voltage and gate voltage characteristics of the change is given a theoretical explanation.