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介绍了在进入22nm技术节点后MOSFET器件的两个发展方向,即多栅结构和应变硅纳米线结构。首先通过分析特征长度与有效栅极数量的关系,表明多栅结构器件可以有效增强栅极对沟道的控制,抑制短沟道效应,接近理想的亚阈值斜率;然后分析了应变对能带结构的影响,从理论上论述了应变沟道可以显著提高载流子迁移率;最后介绍了悬浮硅纳米线通过热氧化诱导形成应变沟道的方法,并对应力来源进行了分析。纳米结构CMOS晶体管由平面沟道结构向立体沟道结构转变,将成为器件未来主流的发展方向。
Two development directions of MOSFET devices after entering the 22nm technology node are introduced, that is, the multi-gate structure and the strained silicon nanowire structure. Firstly, by analyzing the relationship between the characteristic length and the effective gate number, it is shown that the multi-gate structure device can effectively enhance the control of the gate to the channel, suppress the short channel effect and close to the ideal sub-threshold slope; and then analyze the effect of strain on the band structure The theory of strained channel can significantly improve the carrier mobility. Finally, the method of forming a strained channel induced by thermal oxidation of suspended silicon nanowires is introduced, and the source of stress is analyzed. Nanostructured CMOS transistors from the planar channel structure to the three-dimensional channel structure changes, will become the mainstream of the future development of the device.