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采用组合激光(即响应波段内532nm激光和响应波段外1319nm激光)对光导型CdS探测器进行辐照,测量了CdS探测器的破坏阈值。当1319nm激光辐照功率密度保持不变时,波段内激光的加入明显缩短了CdS探测器被破坏时激光所需的辐照时间,并且随着532nm激光功率密度的不断增大,辐照时间先减少后增加;当1319nm激光辐照时间保持不变时,随着532nm激光功率密度的增大,CdS探测器被破坏所需的1319nm激光功率密度先减小后增大,但恢复值仍比没有532nm激光加入时要小,说明了波段内激光的增强作用。上述两种变化趋势与相同条件下探测器的电压响应变化规律一致。
The photoconductive CdS detector was irradiated by a combined laser (ie, a 532 nm laser in the response band and a 1319 nm laser in the response band), and the destructive threshold of the CdS detector was measured. When the power density of 1319nm laser is kept unchanged, the addition of laser in the band significantly shortens the irradiation time required for the laser when the CdS detector is damaged. With the increasing of the laser power density at 532nm, the irradiation time The laser power density at 1319nm first decreases and then increases with the increase of 532nm laser power density, but the recovery value is still higher than that without 532nm laser to be smaller, indicating the enhanced laser band. The above two trends are consistent with the changes of the voltage response of the detector under the same conditions.