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采用了一种方便快捷、无杂质污染的异常晶粒长大方法,以多晶铜为原材料,获取小尺寸单晶铜/大晶粒多晶铜。利用光学显微镜观察了室温压缩之后的多晶Cu块体材料的异常晶粒长大现象,分析了异常长大的晶粒尺寸与冷变形量和退火温度的关系,以及异常晶粒长大现象与晶界形貌的关系。在能够发生异常晶粒长大的范围内,随着冷变形量的减小以及退火温度的降低,异常长大的晶粒尺寸增加。异常晶粒长大现象与小平面晶界晶粒的二维晶核长大机制以及各向异性有关。目前实验得到的最大晶粒尺寸约为5.5mm,可制得边长为2～3mm的小块单晶铜。
Adopting a convenient and fast, impurity-free abnormal grain growth method, polycrystalline copper is used as a raw material to obtain small-size single crystal copper / large-grain polycrystalline copper. The phenomenon of abnormal grain growth of polycrystalline Cu bulk material after compression at room temperature was observed by light microscopy. The relationship between abnormal grain size, cold deformation and annealing temperature, as well as abnormal grain growth and Relationship between grain boundary morphology. Within the range in which abnormal grain growth can occur, as the amount of cold deformation decreases and the annealing temperature decreases, the grain size of abnormally grown grains increases. The abnormal grain growth phenomenon is related to the two-dimensional nucleation mechanism and the anisotropy of grain boundaries. At present, the maximum grain size obtained by experiments is about 5.5 mm, and small single crystal copper with side length of 2 to 3 mm can be obtained.