论文部分内容阅读
栅绝缘层的表面性质对有机场效应晶体管(OFETs)的半导体薄膜的形貌、晶粒生长的有序性和载流子的传输有着重大的影响.研究表明,通过改进栅绝缘层的表面性质,可以有效提高有机场效应晶体管的迁移率.本文综述了OFETs绝缘层表面的粗糙度和表面能对OFETs迁移率的影响,重点探讨了栅绝缘层表面修饰常用的方法,即自组装单层(SAMs)修饰和聚合物修饰与迁移率改进之间的研究进展.最后,展望了该研究方向未来可能的发展趋势.
The surface properties of the gate insulating layer have a great influence on the morphology of the semiconductor films, the order of the grain growth and the carrier transport in OFETs. The research shows that by improving the surface properties of the gate insulating layer , Can effectively improve the mobility of the organic field effect transistor.This paper reviews the OFETs surface roughness and surface energy on OFETs mobility, focusing on the gate insulating layer surface modification commonly used methods that self-assembled monolayer SAMs) modification and polymer modification and mobility improvement.Finally, the possible future development trend of this research direction is prospected.