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[学位论文] 作者：孔祥挺,
来源：中国科学院大学 年份：2017
在未来10nm技术节点及以下，传统CMOS技术在速度、功耗、可靠性等方面受到严峻挑战，如栅极漏电流增加、源漏亚阈值电流增加、栅极可靠性降低以及沟道迁移率降低。芯片功耗密度随......
High-Performance In_(0.23)Ga_(0.77)As Channel MOSFETs with High Current Ratio I_(on)/I_(off) Grown o
[期刊论文] 作者：孔祥挺,周旭亮,李士颜,乔丽君,刘洪刚,王圩,潘教青,,
来源：Chinese Physics Letters 年份：2015
We demonstrate high-performance In_(0.23) Ga_(0.77) As channel metal-oxide-semiconductor Seld-effect transistors(MOSFETs) with high on-current to off-current(I_...
[期刊论文] 作者：李士颜,周旭亮,孔祥挺,李梦珂,米俊萍,王梦琦,潘教青,,
来源：Chinese Physics B 年份：2016
This letter reports the nanoscale spatial phase modulation of Ga As growth in V-grooved trenches fabricated on a Si(001) substrate by metal–organic vapor-phase...
[期刊论文] 作者：李士颜,周旭亮,孔祥挺,李梦珂,米俊萍,边静,王伟,潘教青,,
来源：Chinese Physics Letters 年份：2015
A high quality of GaAs crystal growth in nanoscale V-shape trenches on Si(001) substrates is achieved by using the aspect-ratio trapping method.GaAs thin films...
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