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A crossover from Efros–Shklovskii hopping to activated transport in a GaAs two-dimensional hole syst
[期刊论文] 作者：S.Dlimi,A.Elkaaouachi,L.Limouny,B.A.Hammou,
来源：JournalofSemiconductors 年份：2021
In this paper, we discuss low-temperature hopping-conductivity behavior in the insulating phase, in the absence of a magnetic field. We conduct a theoretical study of the crossover from hopping to activated transport in a GaAs two-dimension......
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