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[期刊论文] 作者：K.S.Zhuravlev,A.L.Chizh,K.B.Mikitchuk,A.M.Gilinsky,I.B.Chistokhin,N.A.Valisheva,D.V.Dmitriev,A.I.Toropov,
来源：半导体学报（英文版） 年份：2022
The design,manufacturing and DC and microwave characterization of high-power Schottky barrier InAIAs/InGaAs back-illuminated mesa structure photodiodes are presented.The photodiodes with 10 and 15μm mesa diameters operate at≥40 and 28 GHz......
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