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[期刊论文] 作者：Cdnan Onac,Ahmet Kaya,Duygu At,
来源：中国化学工程学报:英文版 年份：2019
In this work, the transport and removal of Cr(Ⅵ) were achieved through supported liquid membrane(SLM) by using a 5,17, di-tert-butyl-11,23-bis[(1,4-dioxa-8-aza...
The removal of Cr(Ⅵ) through polymeric supported liquid membrane by using calix[4]arene as a carrier
[期刊论文] 作者：Canan Onac,Ahmet Kaya,Duygu At,
来源：城市道桥与防洪 年份：2019
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-Si
[期刊论文] 作者：SAHAR Alialy,AHMET Kaya,I Uslu,SEMSETTIN Altmdal,,
来源：Chinese Physics Letters 年份：2015
Au/n-Si(MS) structures with a high dielectric interlayer(0.03 graphene-doped PVA) are fabricated to investigate the illumination and voltage effects on electric...
,Illumination and Voltage Dependence of Electrical Characteristics of Au/0.03 Graphene-Doped PVA/n-S
[期刊论文] 作者：SAHAR Alialy,AHMET Kaya,(I) Uslu,(S)EMSETTIN Altmdal,
来源：中国物理快报（英文版） 年份：2015
...
Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si structu
[期刊论文] 作者：Ibrahim Ycedag,Ahmet Kaya,Semsettin Altindal,Ibrahim Uslu,,
来源：Chinese Physics B 年份：2014
In order to investigate of cobalt-doped interfacial polyvinyl alcohol(PVA) layer and interface trap(Dit) effects, Al/pSi Schottky barrier diodes(SBDs) are fabri...
,Frequency and voltage-dependent electrical and dielectric properties of Al/Co-doped PVA/p-Si struct
[期刊论文] 作者：Ibrahim Yüceda(g),Ahmet Kaya,(S)emsettin Altindal,Ibrahim Uslu,
来源：中国物理B（英文版） 年份：2014
...
,Electrical and dielectric properties of Al/p-Si and Al/perylene/p-Si type diodes in a wide frequenc
[期刊论文] 作者：Ahmet Kaya,Sedat Zeyrek,Sait Eren San,(S)msettin Alt(i)ndal,
来源：中国物理B（英文版） 年份：2014
...
,On the Voltage and Frequency Distribution of Dielectric Properties and ac Electrical Conductivity i
[期刊论文] 作者：Ahmet Kaya,(S)emsettin Altindal,Yasemin (S)afak Asar,Zekayi S(o)nmez,
来源：中国物理快报（英文版） 年份：2013
In order to prevent the interdiffusion and reaction between the metal and semiconductor,an insulator/oxide layer such as SiO2,SnO2,TiO2,Si3N4 and an organic lay...
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