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,Growth condition optimization and mobility enhancement through inserting AlAs monolayer in the InP-
[期刊论文] 作者：Shu-Xing Zhou,Ming Qi,Li-Kun Ai,An-Huai Xu,
来源：中国物理B（英文版） 年份：2016
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Characterization of low-resistance ohmic contacts to heavily carbon-doped n-type InGaAsBi films trea
[期刊论文] 作者：Shu-Xing Zhou,Li-Kun Ai,Ming Qi,An-Huai Xu,Jia-Sheng Yan,Shu-Sen Li,Zhi Jin,
来源：中国物理B（英文版） 年份：2021
Carbon-doped InGaAsBi films on InP∶Fe(100)substrates have been grown by gas source molecular beam epitaxy(GSMBE).The electrical properties and non-alloyed Ti/P...
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