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[会议论文] 作者:Xiaoyu Zhang,Zhipeng Zhang,Baoshun Zhang,Hua Qin,
来源:The 5th International Symposium on Ultra-fast Phenomena & Te 年份:2010
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[会议论文] 作者:Hongxin Liu,Xiaoyu Zhang,Zhipeng Zhang,Baoshun Zhang,Hua Qin,
来源:The 5th International Symposium on Ultra-fast Phenomena & Te 年份:2010
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Temperature Effect on the Photocatalytic Degradation of Methyl Orange under UV-vis Light Irradiation
[期刊论文] 作者:HU Qi,LIU Baoshun,ZHANG zhengzhong,SONG Mingxia,ZHAO Xiujian,
来源:武汉理工大学学报(材料科学版)(英文版) 年份:2010
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Antioxidant and Antimicrobial Activities of Tannin Extracts from Castanea mollissima, Cyclobalanopsi
[期刊论文] 作者:Yu LI,Jian WANG,Hong CHEN,Yajun DU,Xueting ZHOU,Baoshun ZHANG,Lujiang YUAN,,
来源:Medicinal Plant 年份:2015
[Objective] To research the effects of hydrochloric acid hydrolysis extraction on the antioxidant and antimicrobial activities of tannin extracts from Castanea...
[会议论文] 作者:Xiufeng Han,Peng Guo,Hongxiang Wei,Jiafeng Feng,Bin Fang,Baoshun Zhang,Zhongming Zeng,
来源:中国物理学会2015年秋季会议 年份:2015
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[会议论文] 作者:Peng Guo,Jiafeng Feng,Hongxiang Wei,Xiufeng Han,Bin Fang,Baoshun Zhang,Zhongming Zeng,
来源:中国物理学会2015年秋季会议 年份:2015
A spin-polarized dc via spin-transfer-torque (STT)effect1,2 can generate microwave oscillations in nanometersizedmagnetic multilayers,which enables anew kind of nanoscale oscillator,referred to as spi...
[期刊论文] 作者:Boyao Cui,Yanhui Xing,Jun Han,Weiming Lv,Wenxing Lv,Ting Lei,Yao Zhang,Haixin Ma,Zhongming Zeng,Baoshun Zhang,
来源:中国物理B(英文版) 年份:2021
In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelec-tronics.Among them,photoelectric devices ba...
[期刊论文] 作者:Qian Chen,Weiming Lv,Shangkun Li,Wenxing Lv,Jialin Cai,Yonghui Zhu,Jiachen Wang,Rongxin Li,Baoshun Zhang,
来源:中国物理B(英文版) 年份:2021
Spin orbit torques (SOTs) in ferromagnet/heavy-metal heterostructures have provided great opportunities for efficient manipulation of spintronic devices.However,deterministically field-flee switching of perpendicular magnetization with SOTs......
Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression o
[期刊论文] 作者:Zhang,Kai Fu,Guohao Yu,Xiaodong Zhang,Shichuang Sun,Liang Song,Ronghui Hao,Yaming Fan,Yong Cai,Baoshun Zhang,
来源:Journal of Semiconductors 年份:2017
We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numeri...
[期刊论文] 作者:Wenkui Lin,Tao He,Yukun Zhao,Yuhua Sun,Qi Cui,Xuan Zhang,Shulong Lu,Xuemin Zhang,Yameng Xu,Mei Kong,Baoshun Zhang,
来源:中国光学快报(英文版) 年份:2020
A monolithic integrated ultraviolet-infrared(UV-IR)dual-color photodetector based on graphene/GaN hetero-junction was fabricated by vertically integrating a GaN...
[会议论文] 作者:Guodong Gu,顾国栋,蔡勇,王越,于国浩,董志华,曾春红,张宝顺,Yong Cai,Yue Wang,Guohao yu,Zhihua Dong,Chunhong Zeng,Baoshun Zhang,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
本文提出了一种提高AlGaN/GaN HEMT的击穿电压的结构,即纳米沟道阵列。在栅漏间距为lm的情况下,含有纳米沟道阵列结构的器件的关态击穿电压达到105V,而无此结构的常规器...
[会议论文] 作者:Gu,顾国栋,蔡勇,Yong Cai,Zhihong Feng,冯志红,Yue Wang,王越,Guohao yu,于国浩,Zhihua Dong,董志华,曾春红,Chunhong Zeng,Baoshun Zhang,
来源:第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份:2012
本文提出了一种提高AlGaN/GaN HEMT的击穿电压的结构,即纳米沟道阵列。在栅漏间距为lm的情况下,含有纳米沟道阵列结构的器件的关态击穿电压达到105V,而无此结构的常规器件的击穿电压为54.5V。通过计算,纳米沟道阵列器件的栅漏之间的平均击穿场强达到1 MV/cm,大......
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