搜索筛选:
搜索耗时2.5952秒,为你在为你在102,285,761篇论文里面共找到 12 篇相符的论文内容
发布年度:
[会议论文] 作者：Xiaoyu Zhang,Zhipeng Zhang,Baoshun Zhang,Hua Qin,
来源：The 5th International Symposium on Ultra-fast Phenomena & Te 年份：2010
...
[会议论文] 作者：Hongxin Liu,Xiaoyu Zhang,Zhipeng Zhang,Baoshun Zhang,Hua Qin,
来源：The 5th International Symposium on Ultra-fast Phenomena & Te 年份：2010
...
Temperature Effect on the Photocatalytic Degradation of Methyl Orange under UV-vis Light Irradiation
[期刊论文] 作者：HU Qi,LIU Baoshun,ZHANG zhengzhong,SONG Mingxia,ZHAO Xiujian,
来源：武汉理工大学学报（材料科学版）（英文版） 年份：2010
...
Antioxidant and Antimicrobial Activities of Tannin Extracts from Castanea mollissima, Cyclobalanopsi
[期刊论文] 作者：Yu LI,Jian WANG,Hong CHEN,Yajun DU,Xueting ZHOU,Baoshun ZHANG,Lujiang YUAN,,
来源：Medicinal Plant 年份：2015
[Objective] To research the effects of hydrochloric acid hydrolysis extraction on the antioxidant and antimicrobial activities of tannin extracts from Castanea...
[会议论文] 作者：Xiufeng Han,Peng Guo,Hongxiang Wei,Jiafeng Feng,Bin Fang,Baoshun Zhang,Zhongming Zeng,
来源：中国物理学会2015年秋季会议 年份：2015
...
[会议论文] 作者：Peng Guo,Jiafeng Feng,Hongxiang Wei,Xiufeng Han,Bin Fang,Baoshun Zhang,Zhongming Zeng,
来源：中国物理学会2015年秋季会议 年份：2015
A spin-polarized dc via spin-transfer-torque (STT)effect1,2 can generate microwave oscillations in nanometersizedmagnetic multilayers,which enables anew kind of nanoscale oscillator,referred to as spi...
[期刊论文] 作者：Boyao Cui,Yanhui Xing,Jun Han,Weiming Lv,Wenxing Lv,Ting Lei,Yao Zhang,Haixin Ma,Zhongming Zeng,Baoshun Zhang,
来源：中国物理B（英文版） 年份：2021
In recent years,low-dimensional materials have received extensive attention in the field of electronics and optoelec-tronics.Among them,photoelectric devices ba...
[期刊论文] 作者：Qian Chen,Weiming Lv,Shangkun Li,Wenxing Lv,Jialin Cai,Yonghui Zhu,Jiachen Wang,Rongxin Li,Baoshun Zhang,
来源：中国物理B（英文版） 年份：2021
Spin orbit torques (SOTs) in ferromagnet/heavy-metal heterostructures have provided great opportunities for efficient manipulation of spintronic devices.However,deterministically field-flee switching of perpendicular magnetization with SOTs......
Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression o
[期刊论文] 作者：Zhang,Kai Fu,Guohao Yu,Xiaodong Zhang,Shichuang Sun,Liang Song,Ronghui Hao,Yaming Fan,Yong Cai,Baoshun Zhang,
来源：Journal of Semiconductors 年份：2017
We proposed a novel Al Ga N/Ga N enhancement-mode(E-mode) high electron mobility transistor(HEMT) with a dual-gate structure and carried out the detailed numeri...
[期刊论文] 作者：Wenkui Lin,Tao He,Yukun Zhao,Yuhua Sun,Qi Cui,Xuan Zhang,Shulong Lu,Xuemin Zhang,Yameng Xu,Mei Kong,Baoshun Zhang,
来源：中国光学快报（英文版） 年份：2020
A monolithic integrated ultraviolet-infrared(UV-IR)dual-color photodetector based on graphene/GaN hetero-junction was fabricated by vertically integrating a GaN...
[会议论文] 作者：Guodong Gu,顾国栋,蔡勇,王越,于国浩,董志华,曾春红,张宝顺,Yong Cai,Yue Wang,Guohao yu,Zhihua Dong,Chunhong Zeng,Baoshun Zhang,
来源：第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份：2012
本文提出了一种提高AlGaN/GaN HEMT的击穿电压的结构,即纳米沟道阵列。在栅漏间距为lm的情况下,含有纳米沟道阵列结构的器件的关态击穿电压达到105V,而无此结构的常规器...
[会议论文] 作者：Gu,顾国栋,蔡勇,Yong Cai,Zhihong Feng,冯志红,Yue Wang,王越,Guohao yu,于国浩,Zhihua Dong,董志华,曾春红,Chunhong Zeng,Baoshun Zhang,
来源：第十七届全国化合物半导体材料微波器件和光电器件学术会议 年份：2012
本文提出了一种提高AlGaN/GaN HEMT的击穿电压的结构,即纳米沟道阵列。在栅漏间距为lm的情况下,含有纳米沟道阵列结构的器件的关态击穿电压达到105V,而无此结构的常规器件的击穿电压为54.5V。通过计算,纳米沟道阵列器件的栅漏之间的平均击穿场强达到1 MV/cm,大......
相关搜索：
