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[期刊论文] 作者：Xinyu Ma,Baoxing Duan,Yintang Yang,,
来源：Journal of Semiconductors 年份：2017
A 500-600 MHz high-efficiency,high-power GaN power amplifier is designed and realized on the basis of the push-pull structure.The RC-LC stability network is pro...
[期刊论文] 作者：Haoran Wang,Baoxing Duan,Licheng Sun,Yintang Yang,
来源：中国物理B（英文版） 年份：2021
A novel silicon-on-insulator lateral insulated gate bipolar transistor(SOI LIGBT)is proposed in this paper.The proposed device has a P-type buried layer and a p...
Novel Si/SiC heterojunction lateral double-diffused metal-oxide semiconductor field-effect transisto
[期刊论文] 作者：Baoxing Duan,Xin Huang,Haitao Song,Yandong Wang,Yintang Yang,
来源：中国物理B（英文版） 年份：2021
A novel silicon carbide(SiC)on silicon(Si)heterojunction lateral double-diffused metal-oxide semiconductor field-effect transistor with p-type buried layer(PBL...
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