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[会议论文] 作者:Bram HOEX, 来源:2015第十一届中国太阳级硅及光伏发电研讨会 年份:2015
[会议论文] 作者:Bram HOEX,Alex TO,Jingnan TONG, 来源:第十二届中国太阳级硅及光伏发电研讨会 年份:2016
[会议论文] 作者:Bram HOEX,Alex TO,Jingnan TONG, 来源:第十二届中国太阳级硅及光伏发电研讨会 年份:2016
Surface passivation fundamentals Reduction of recombination centres Unpassivated c-Si surface contains~1014 cm-2 defects...
[会议论文] 作者:Bram Hoex,Chang-Yeh Lee,Tian Zhang, 来源:第十三届全国太阳级硅及光伏发电研讨会 年份:2017
Definition of carrier selectivity The resistance for minority carriers is defined as The resistance for majority carriers is defined as Consequently,we can define the following as the selectivity Cons...
[会议论文] 作者:Allen BARNETTT,Jianshu HAN,Bram HOEX,Fay JIAO,Craig M.JOHNSON,Anthony LOCHTEFELD, 来源:SNEC 第十届(2016)国际太阳能产业及光伏工程(上海)论坛 年份:2016
Commercial steel roofs are an attractive platform for building-integrated photovoltaics (BIPV).The potential advantages include the reduction of labour and materials when contrasted to a building-atta...
[会议论文] 作者:Tian Zhang,Anower Hossain,Chang-Yeh Lee,Yahya Zakaria,Amir A Abdallah,Bram Hoex, 来源:2018 年第十四届中国太阳级硅及光伏发电研讨会 年份:2018
Outline Carrier selective contacts Motivation and approach Atomic Layer Deposition(ALD) process Material properties Contact performance Conclusions and outlook...
[会议论文] 作者:Malcolm Abbott,Keith McIntosh,Ben Sudbury,Jenya Meydbrey,Tsun Fung,Muhammad Umair Khan,Yu Zhang,Bram Hoex, 来源:2018 年第十四届中国太阳级硅及光伏发电研讨会 年份:2018
Project overview Motivation Improve the accuracy of total yield simulations-The true output of solar technology is the amount of energy it delivers when deployed in a real situation.-Used to design an...
[会议论文] 作者:Bram Hoex,Wei-Min Li,Li Xiang,Tian Zhang,Chang-Yeh Lee,Kean Khoo,Geedhika Poduval,Borong Sang,Anower, 来源:2018 年第十四届中国太阳级硅及光伏发电研讨会 年份:2018
SPREE PV research overview Outline SPREE research overview Carrier selective contacts Ultrathin oxides:Measurement of ultrathin oxides using Brewster...
[会议论文] 作者:Yu Zhang,Malcolm D.Abbott,Bram Hoex,David N.R.Payne,Tsun H.Fung,Muhammad U.Khan,Shaozhou Wang,Anastasia, 来源:2018 年第十四届中国太阳级硅及光伏发电研讨会 年份:2018
Project scope 1.Study fundamental properties of black silicon(bSi)2.Develop rapid modelling techniques for bSi3.Establish improved characterisation techniques-For fundamentals studies-Industrially rel...
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