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The impact of Al2O3 back interface layer on low-temperature growth of ultrathin Cu(In,Ga)Se2 solar c
[期刊论文] 作者：LIUYang,LIUWei,CHENMeng-xin,SHISi-han,HEZhi-chao,GONGJin-long,WANGTuo,ZHOUZhi-qiang,LIUFang-fang,SUNYun,
来源：OptoelectronicsLetters 年份：2018
With reducing the absorber layer thickness and processing temperature, the recombination at the back interface is se-vere, which both can result in the decrease of open-circuit voltage and fill factor. In this paper, we prepare Al2O3 by ato......
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