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Visible- and solar-blind photodetectors using AlGaN high electron mobility transistors with nanodot-
[期刊论文] 作者：AndrewM.Armstrong,BriannaA.Klein,AndrewA.Allerman,AlbertG.Baca,MaryH.Crawford,JacobPodkaminer,CarlosR.Perez,
来源：PhotonicsResearch 年份：2019
AlGaN-channel high electron mobility transistors (HEMTs) were operated as visible- and solar-blind photodetectors by using GaN nanodots as an optically active floating gate. The effect of the floating gate was large enough to switch an HEMT......
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