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Plasma-Neutral Gas Structure in a Magnesium Cathodic Arc Operating at Oxygen Gas with Experimental C
[期刊论文] 作者：ZHU Daoyun,ZHENG Changxi,CHEN,
来源：黑龙江科技学院学报 年份：2013
为探究吕家坨井田地质构造格局,根据钻孔勘探资料,采用分形理论和趋势面分析方法,研究了井田7...
[期刊论文] 作者：Changxi Chen,Nisar Hussain,Yar,
来源：Horticultural Plant Journal(园艺学报:英文版) 年份：2020
The speed of flower opening is closely related to their ornamental period.Ethylene functions as a negative regulator involved in the regulation of the petal exp...
[期刊论文] 作者：Changxi Chen,Quan Wang,Wei Li,Qian Wang,Chun Feng,Lijuan Jiang,Hongling Xiao,Xiaoliang Wang,
来源：半导体学报:英文版 年份：2021
In this paper,we investigated the effect of post-gate annealing(PGA)on reverse gate leakage and the reverse bias reliability of Al0.23Ga0.77N/GaN high electron mobility transistors(HEMTs).We found that the Poole-Frenkel(PF)emission i...
[期刊论文] 作者：Changxi Chen,Nisar Hussain,Yaru Wang,Mingtong Li,Lin Liu,Meizhu Qin,Nan Ma,Junping Gao,Xiaoming Sun,
来源：园艺学报（英文版） 年份：2020
The speed of flower opening is closely related to their ornamental period. Ethylene functions as a negative regulator involved in the regulation of the petal ex...
[期刊论文] 作者：Quan Wang,Changxi Chen,Wei Li,Yanbin Qin,Lijuan Jiang,Chun Feng,Qian Wang,Hongling Xiao,Xiufang Chen,,
来源：半导体学报（英文版） 年份：2021
State-of-the-art AlGaN/GaN high electron mobility structures were grown on semi-insulating 4H-SiC substrates by MOCVD and X-band microwave power high electron mobility transistors were fabricated and characterized.Hall mobility of 2291.1 cm......
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