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[期刊论文] 作者：Waseem Khan,Chao-Hui He,Qing-M,
来源：核技术:英文版 年份：2019
This report presents a design system based on the use of CsI(TI) detectors to search for lost radioactive sources that are dangerous and harmful to individuals,...
,Research on SEE mitigation techniques using back junction and p+buffer layer in domestic non-DTI Si
[期刊论文] 作者：Jia-Nan Wei,Chao-Hui He,Pei Li,Yong-Hong Li,
来源：中国物理B（英文版） 年份：2019
In this paper we investigate two techniques for single event effect (SEE) mitigation by using back junction and p+buffer layer in non-deep trench isolation (DTI...
,Impact of proton-induced alteration of carrier lifetime on single-event transient in SiGe heterojun
[期刊论文] 作者：Jia-Nan Wei,Chao-Hui He,Pei Li,Yong-Hong Li,Hong-Xia Guo,
来源：中国物理B（英文版） 年份：2019
This paper presents an investigation into the impact of proton-induced alteration of carrier lifetime on the single-event transient (SET) caused by heavy ions i...
[期刊论文] 作者：Waseem Khan,Chao-Hui He,Qing-Min Zhang,Yu Cao,Wei-Tao Yang,
来源：核技术（英文版） 年份：2019
This report presents a design system based on the use of CsI(TI) detectors to search for lost radioactive sources that are dangerous and harmful to individuals,...
[期刊论文] 作者：Hang Zang,Xing-Qing Cao,Chao-Hui He,Zhi-Sheng Huang,Yong-Hong Li,
来源：核技术（英文版） 年份：2018
A two-dimensional axisymmetric finite element model based on an improved cohesive element method was developed to simulate interfacial debonding,sliding frictio...
[期刊论文] 作者：Pei Li,Mo-Han Liu,Chao-Hui He,Hong-Xia Guo,Jin-Xin Zhang,Ting Ma,
来源：中国物理B（英文版） 年份：2017
Different SiGe processes and device designs are the critical influences of ionizing radiation damage.Based on the different ionizing radiation damage in SiGe HB...
,Three-dimensional simulation of fabrication process-dependent effects on single event effects of Si
[期刊论文] 作者：Jin-Xin Zhang,Chao-Hui He,Hong-Xia Guo,Pei Li,Bao-Long Guo,Xian-Xiang Wu,
来源：中国物理B（英文版） 年份：2017
The fabrication process dependent effects on single event effects (SEEs) are investigated in a commercial silicongermanium heterojunction bipolar transistor (Si...
[期刊论文] 作者：Pei Li,Chao-Hui He,Gang Guo,Hong-Xia Guo,Feng-Qi Zhang,Jin-Xin Zhang,Shu-Ting Shi,
来源：中国物理快报（英文版） 年份：2017
Silicon-germanium (SiGe) hetero-junction bipolar transistor current transients induced by pulse laser and heavy iron are measured using a real-time digital osci...
,Propagation of a Scattered Electromagnetic Wave with P-Polarization (TE) Mode in Atmospheric Plasma
[期刊论文] 作者：JIANG Zhong-He,HU Xi-Wei,LIU Ming-Hai,LAN Chao-Hui,HE Yong,ZHANG Shu,PAN Yuan,
来源：中国物理快报（英文版） 年份：2006
The finite-difference-time-domain method is applied to simulate the two-dimensional propagation ofa p-polarization mode electromagnetic wave in atmospheric plas...
[期刊论文] 作者：Wei-Tao Yang,Qian Yin,Yang Li,Gang Guo,Yong-Hong Li,Chao-Hui He,Yan-Wen Zhang,Fu-Qiang Zhang,Jin-Hua,
来源：核技术（英文版） 年份：2019
Single-event effects (SEEs) induced by medium-energy protons in a 28 nm system-on-chip (SoC) were investigated at the China Institute of Atomic Energy. An on-ch...
[期刊论文] 作者：Wei-Tao Yang,Yong-Hong Li,Ya-Xin Guo,Hao-Yu Zhao,Yang Li,Pei Li,Chao-Hui He,Gang Guo,Jie Liu,Sheng-Sheng,
来源：中国物理B（英文版） 年份：2020
Single event effects (SEEs) in a 28-nm system-on-chip (SoC) were assessed using heavy ion irradiations, and suscep-tibilities in different processor configurati...
Single-event-effect propagation investigation on nanoscale system on chip by applying heavy-ion micr
[期刊论文] 作者：Wei-Tao Yang,Xue-Cheng Du,Yong-Hong Li,Chao-Hui He,Gang Guo,Shu-Ting Shi,Li Cai,Sarah Azimi,Corrado De,
来源：核技术（英文版） 年份：2021
The propagation of single-event effects(SEEs)on a Xilinx Zynq-7000 system on chip(SoC)was inves-tigated using heavy-ion microbeam radiation.The irradia-tion results reveal several functional blocks\'sensitivity locations and cross sections,......
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