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A tri-functional probe to track and quantify MSC implanted with different routes in mouse cerebral i
[会议论文] 作者:Chunfu Zhang,
来源:第五届全国低场核磁共振技术与应用研讨会 年份:2013
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A tri-functional probe to track and quantify MSC implanted with different routes in mouse cerebral i
[会议论文] 作者:Chunfu Zhang,
来源:第五届全国低场核磁共振技术与应用研讨会 年份:2013
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Efficient PEIE modified planar heterojunction perovskite solar cell via low temperature solution pro
[会议论文] 作者:Shi Tang,Chunfu Zhang,
来源:第九届全国暨华人有机分子和聚合物发光学术会议暨第一届有机电子学术会议 年份:2015
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[会议论文] 作者:Xu Sun,chunfu Zhang,
来源:第九届全国暨华人有机分子和聚合物发光学术会议暨第一届有机电子学术会议 年份:2015
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[会议论文] 作者:Yi Yang,Lu Zhang,Chunfu Zhang,
来源:纳米药物及纳米生物技术国际学术大会暨中国药学会纳米药物专业委员会成立大会 年份:2015
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Development of Dual Modality (PET/MRI) and Dual Targeting (αvβ3/EGFR) Magnetic Nanoprobe for Early D
[会议论文] 作者:Zhetao liu,Chunfu Zhang,Meikui Tong,Jiali Cai,Shiyuan Liu,
来源:纳米药物及纳米生物技术国际学术大会暨中国药学会纳米药物专业委员会成立大会 年份:2015
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Development of Dual Modality (PET/MRI) and Dual Targeting (αvβ3/EGFR) Magnetic Nanoprobe for Early D
[会议论文] 作者:Meikui Tong,Zhetao liu,Jiali Cai,Shiyuan Liu,Chunfu Zhang,
来源:纳米药物及纳米生物技术国际学术大会暨中国药学会纳米药物专业委员会成立大会 年份:2015
Introduction: Multimodal imaging, such as PET/CT and SPECT/CT, have become important diagnostic tools.MRI offers excellent soft tissue contrast and anatomic information.PET has high sensitivity and ca...
Research on the hydrogen terminated single crystal diamond MOSFET with MoO3 dielectric and gold gate
[期刊论文] 作者:Zeyang Ren,Jinfeng Zhang,Jincheng Zhang,Chunfu Zhang,Pengzhi Yang,Dazheng Chen,Yao Li,Yue Hao,
来源:城市道桥与防洪 年份:2018
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
Interfacial Voids Trigger Carbon-Based, All-Inorganic CsPbIBr2 Perovskite Solar Cells with Photovolt
[期刊论文] 作者:Weidong Zhu,Zeyang Zhang,Dandan Chen,Wenming Chai,Dazheng Chen,Jincheng Zhang,Chunfu Zhang,Yue Hao,
来源:纳微快报(英文) 年份:2020
A novel interface design is proposed for carbon-based,all-inorganic CsPbIBr2 perovskite solar cells (PSCs) by introducing interracial voids between TiO2 electro...
[期刊论文] 作者:Haiyong WANG,Wei MAO,Shenglei ZHAO,Yuanhao HE,Jiabo CHEN,Ming DU,Xuefeng ZHENG,Chong WANG,Chunfu ZHANG,
来源:中国科学:信息科学(英文版) 年份:2022
Dear editor,rnGaN-on-Si high electron mobility transistors(HEMTs)have attracted attention for power device applications due to their low cost and large-area availability[1].Recently,bidirectional switches are highly desirable in many indus-......
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