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[期刊论文] 作者：Dai Xian-Ying,Ji Yao,Hao Yue,
来源：中国物理B（英文版） 年份：2014
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[期刊论文] 作者：Jiang Tao,Zhang He-Ming,Wang Wei,Hu Hui-Yong,Dai Xian-Ying,
来源：中国物理（英文版） 年份：2006
A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively st...
[期刊论文] 作者：Song Jian-Jun,Zhang He-Ming,Hu Hui-Yong,Dai Xian-Ying,Xuan Rong-Xi,
来源：中国物理B（英文版） 年份：2007
The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si1-xGex substrate is systematically investigated, including the number of equiva...
[期刊论文] 作者：Qin Shan-Shan,Zhang He-Ming,Hu Hui-Yong,Dai Xian-Ying,Xuan Rong-Xi,Shu Bin,
来源：中国物理B（英文版） 年份：2010
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGexrelaxd Si1-yGey(s-Si/s-SiGe/Si1-yG...
[期刊论文] 作者：Hu Hui-Yong,Zhang He-Ming,Dai Xian-Ying,Jia Xin-Zhang,Cui Xiao-Ying,Wang Wei,Ou Jian-Feng,Wang Xi-Yuan,
来源：中国物理（英文版） 年份：2005
The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction...
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