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Design and Realization of Schottky Barrier Didoes in 130nm CMOS Process
[期刊论文] 作者：Junyu Shi,Dasheng Cui,Haidong, 来源：北京理工大学学报：英文版 年份：2017
A polysilicon separated CMOS Schottky barrier diode is designed and tested in this study.By replacing the shallow trench isolation(STI)of a ploy ring,the series...
A small signal coupling model for predicting the coupling between LNAs
[期刊论文] 作者：Junyu Shi,Dasheng Cui,Yuming Wu,, 来源：Journal of Semiconductors 年份：2017
A small signal coupling model is developed to analyze the coupling between two LNAs. The mutual inductance between the adjacent on-chip inductors is considered...
Design and Realization of Schottky Barrier Didoes in 130 nm CMOS Process
[期刊论文] 作者：Junyu Shi,Dasheng Cui,Haidong Hao,Haixia Wu,Xin Lyu,, 来源：Journal of Beijing Institute of Technology 年份：2017
A polysilicon separated CMOS Schottky barrier diode is designed and tested in this study.By replacing the shallow trench isolation(STI)of a ploy ring,the series...
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