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Low-Programmable-Voltage Nonvolatile Memory Devices Based on Omega-shaped Gate Organic Ferroelectric
[期刊论文] 作者：Ngoc Huynh Van,Jae-Hyun Lee,Dongmok Whang,Dae Joon Kang,,
来源：Nano-Micro Letters 年份：2015
A facile approach was demonstrated for fabricating high-performance nonvolatile memory devices based on ferroelectric-gate field effect transistors using a p-ty...
[期刊论文] 作者：Seh-Yoon Lim,Sudong Chae,Su-Ho Jung,Yuhwan Hyeon,Wonseok Jang,Won-Sub Yoon,Jae-Young Choi,Dongmok Whang,
来源：Journal of Materials Science & Technology 年份：2017
Silicon nanowires(SiNWs) encapsulated with graphene-like carbon sheath(GS) having a void space in between(SiNW@V@GS) are demonstrated for the improved electroch...
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