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,Breakdown voltage analysis of Al0.25Ga0.75N/GaN high electron mobility transistors with partial sil
[期刊论文] 作者：Duan Bao-Xing,Yang Yin-Tang,
来源：中国物理B（英文版） 年份：2012
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[期刊论文] 作者：Duan Bao-Xing,Zhang Bo,Li Zhao-Ji,
来源：中国物理B（英文版） 年份：2007
A new super-junction lateral double diffused MOSFET (LDMOST) structure is designed with n-type charge compensation layer embedded in the p--substrate near the d...
,New Power Lateral Double Diffused Metal-Oxide-Semiconductor Transistor with a Folded Accumulation L
[期刊论文] 作者：DUAN Bao-Xing,ZHANG Bo,LI Zhao-Ji,
来源：中国物理快报（英文版） 年份：2007
A new lateral double diffused metal oxide semiconductor field effect transistor with a double-charge accumulation layer using a folded silicon substrate is prop...
,A Novel Super-Junction Lateral Double-Diffused Metal-Oxide-Semiconductor Field Effect Transistor wi
[期刊论文] 作者：CHENG Jian-Bing,ZHANG Do,DUAN Bao-Xing,LI Zhao-Ji,
来源：中国物理快报（英文版） 年份：2008
A novel super-junction lateral double-diffused metal-nxide-semiconductor field effect transistor(SJ-LDMOSFET)with n-type step doping buffer layer is proposed.Th...
New 4H silicon carbide metal semiconductor field-effect transistor with a buffer layer between the g
[期刊论文] 作者：Zhang Xian-Jun,Yang Yin-Tang,Duan Bao-Xing,Chen Bin,Chai Chang-Chun,Song Kun,
来源：中国物理B（英文版） 年份：2012
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Modeling of the drain-induced barrier lowering effect and optimization for a dual-channel 4H silicon
[期刊论文] 作者：Zhang Xian-Jun,Yang Yin-Tang,Duan Bao-Xing,Chai Chang-Chun,Song Kun,Chen Bin,
来源：中国物理B（英文版） 年份：2012
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,Drain-induced barrier lowering effect for short channel dual material gate 4H silicon carbide metal
[期刊论文] 作者：Zhang Xian-Jun,Yang Yin-Tang,Duan Bao-Xing,Chai Chang-Chun,Song Kun,Chen Bin,
来源：中国物理B（英文版） 年份：2012
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