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A compact charge-based model to study the nanoscale undoped double gate MOSFETs for nanoelectronic c
[期刊论文] 作者：T.Bendib,F.Djeffal,D.Arar,,
来源：Journal of Semiconductors 年份：2013
The analytical modeling of nanoscale devices is an important area of computer-aided design for fast and accurate nanoelectronic design and optimization.In the p...
An optimized junctionless GAA MOSFET design based on multi-objective computation for high-performanc
[期刊论文] 作者：T.Bendib,F.Djeffal,M.Meguellati,,
来源：Journal of Semiconductors 年份：2014
An analytical investigation has been proposed to study the subthreshold behavior of junctionless gates all around(JLGAA) MOSFET for nanoscale CMOS analog applic...
A fuzzy-logic-based approach to accurate modeling of a double gate MOSFET for nanoelectronic circuit
[期刊论文] 作者：F.Djeffal,A.Ferdi,M.Chahdi,,
来源：半导体学报 年份：2012
The double gate(DG) silicon MOSFET with an extremely short-channel length has the appropriate features to constitute the devices for nanoscale circuit design.To...
ANFIS-based approach to studying subthreshold behavior including the traps effect for nanoscale thin
[期刊论文] 作者：T.Bentrcia,F.Djeffal,E.Chebaaki,,
来源：Journal of Semiconductors 年份：2013
A fuzzy framework based on an adaptive network fuzzy inference system(ANFIS) is proposed to evaluate the relative degradation of the basic subthreshold paramete...
[期刊论文] 作者：K.Kacha,F.Djeffal,H.Ferhati,D.Arar,M.Meguellati,
来源：城市道桥与防洪 年份：2015
该文从挂篮荷载计算、施工流程、支座及临时固结施工、挂篮安装及试验、合拢段施工、模板制作安装、钢筋安装、混凝土的浇筑及养生、测量监控等方面人手,介绍了S226海滨大桥...
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