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[会议论文] 作者：X.Cao,M.Zhong,S.Tian,F.Gou,
来源：第十六届全国等离子体科学技术会议暨第一届全国等离子体医学研讨会 年份：2013
Due to its many advantages of direct removal of the heat, self-repairing in case of damage by overheating, liquid lithium as plasma facing materials and protection of the first wall are attracting mor...
[会议论文] 作者：J.Zhang,P.Wang,F.Chen,W.Sun,X.Lv,P.He,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
In this study PlASIMO was used to investigate the effect of current on energy exchanging in argon plasmas produced in the cascaded arc,the currents of 30,50,70,90 A were chosen.The simulation results...
[会议论文] 作者：F.Gou,M.A.Gleeson,A.W.Kleyn,R.W.E.van de Kruijs,A.E.Yakshin,F.Bijkerk,
来源：9th International Conference on Computer Siumlaation of Radi 年份：2008
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[会议论文] 作者：SUN Wei-zhong,ZHAO Cheng-li,ZHANG Jun-yuan,LU Xiao-dan,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
Molecular dynamics simulations were performed to study interactions between atomic hydrogen and silicon carbon.In present study,we focus on the effect of the surface temperature on H interacting with...
[会议论文] 作者：SUNWei-zhong[1]ZHAOCheng-li[2]ZHANGJun-yuan[1]LUXiao-dan[2]F.Gou[3],
来源：第十五届全国等离子体科学技术会议 年份：2011
Molecular dynamics simulations were performed to study interactions between atomic hydrogen and silicon carbon.In present study,we focus on the effect of th...
[会议论文] 作者：Tian Shu-ping,Sun Wei-zhong,Zhang yan-po,Zhao Cheng-li,Chen Feng,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
During fabricating hydrogenated silicon films using plasma enhanced chemical vapor deposition method (PECVD),the interactions between SiH3+ ions and surfaces signifincantly affect performances of the...
[会议论文] 作者：Y.X,Xia,S.R,Luo,X.C,Ma,L,Han,F.Gou,C.J,Tang,
来源：第13届中日双边先进能源系统和聚变裂变工程材料会议(CIS-13) 年份：2016
High spatial and temporal resolution Thomson scattering diagnostic system can provide accurate profiles of plasma temperature and density,which play an important role in the study of linear plasma gen...
[会议论文] 作者：TianShu-ping[1]SunWei-zhong[1]Zhangyan-po[1]ZhaoCheng-li[2]ChenFeng[2]F.Gou[3],
来源：第十五届全国等离子体科学技术会议 年份：2011
During fabricating hydrogenated silicon films using plasma enhanced chemical vapor deposition method (PECVD),the interactions between SiH3+ ions and surface...
[会议论文] 作者：Zhao Cheng-li,Sun Wei-zhong,Zhang Jun-yuan,Chen Feng,He Ping-ni,Lu Xiao-dan,F.Gou,
来源：第十五届全国等离子体科学技术会议 年份：2011
Silicon films are deposited using plasma enhanced chemical vapor deposition (PECVD) through SiH4-containing glow discharges [1].In this process,interactions between radicals (H,SiH,SiH2 and SiH3 et.al...
[会议论文] 作者：ZhaoCheng-li[1]SunWei-zhong[2]ZhangJun-yuan[2]ChenFeng[1]HePing-ni[3]LuXiao-dan[3]F.Gou[4],
来源：第十五届全国等离子体科学技术会议 年份：2011
Silicon films are deposited using plasma enhanced chemical vapor deposition (PECVD) through SiH4-containing glow discharges [1].In this process,interactions...
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