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[会议论文] 作者：D.Xia,W.Ding,F.Yun,Q.Li,Y.Zhang,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
In this paper,we used FDTD Solutions software to simulate the reflectance of two-dimensional photonic crystal by changing duty ratio from 40%to 70%.The diff...
[会议论文] 作者：D.Xia,W.Ding,F.Yun,Q.Li,Y.Zhang,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
In this paper,we used FDTD Solutions software to simulate the reflectance of two-dimensional photonic crystal by changing duty ratio from 40%to 70%.The diff...
[会议论文] 作者：F.Yun,Y.F.Li,X.L.Sn,S.Wang,W.Ding,X.Hou,
来源：第13届全国MOCVD学术会议 年份：2014
One of the main obstacles to the application of InGaN/GaN light-emitting diodes (LEDs) as a general lighting source is so-called efficiency droop, gradual efficiency reduction at high current injectio...
[会议论文] 作者：L.Zhang,W.Ding,F.Yun,M.Zheng,D.Xia,Q.Li,M.Guo,Y.Zhang,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
With the development of lighting technology,high-power white LEDs will become the future mainstream technology.At present,there are still many problems in optical stability,reliability,heat dissipatio...
[会议论文] 作者：J.Wang,W.Ding,F.Yun,Q.Li,D.Xia,S.Wang,L.Feng,Y.Zhang,M.Guo,S.Liu,Z.Gong,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
The Ⅲ-N material system(including alloys of InN,AlN,and GaN)has several characteristics which give it key advantages over the existing solar cell materials,for example,the high absorption coefficient...
[会议论文] 作者：D.Xia,W.Ding,F.Yun,Q.Li,Y.Huang,M.Zhang,M.Zheng,y.Zhang,H.Wang,M.Guo,Z.Wei,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
The Ⅲ-Ⅴ nitride material such as InN GaN has many favorable physical properties including a wide direct band-gap(0.7-3.4eV),high absorption coefficients(105cm-1),and high radiation resistance.InGaN ha...
[期刊论文] 作者：Zhongpeng Zhu,Zhenwei Yu,Frank F.Yun,Deng Pan,Ye Tian,Lei Jiang,Xiaolin Wang,
来源：国家科学评论（英文版） 年份：2021
Knowledge of intrinsic wettability at solid/liquid interfaces at the molecular level perspective is significant in understanding crucial progress in some fields...
[会议论文] 作者：L.Zhang[1]W.Ding[2]F.Yun[2]M.Zheng[2]D.Xia[2]Q.Li[2]M.Guo[2]Y.Zhang[2],
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
With the development of lighting technology,high-power white LEDs will become the future mainstream technology.At present,there are still many problems in o...
[会议论文] 作者：J.Wang[1]W.Ding[2]F.Yun[1]Q.Li[1]D.Xia[3]S.Wang[3]L.Feng[4]Y.Zhang[5]M.Guo[4]S.Liu;Z.Gong;,
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
The Ⅲ-N material system(including alloys of InN,AlN,and GaN)has several characteristics which give it key advantages over the existing solar cell materials...
[会议论文] 作者：D.Xia[1]W.Ding[1]F.Yun[2]Q.Li[3]Y.Huang[3]M.Zhang[3]M.Zheng[3]y.Zhang[3]H.Wang[3]M.Guo[3]Z.Wei[3],
来源：2014年光子与光学工程国际会议暨西部光子学学术会议 年份：2014
The Ⅲ-Ⅴ nitride material such as InN GaN has many favorable physical properties including a wide direct band-gap(0.7-3.4eV),high absorption coefficients(1...
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