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Study on Relationship between InGaAsP/InP LPE Wafer Morphology,Interface Property and Device Charact
[期刊论文] 作者：Li, Weidan, Fu, Xiaomei, Pan,,
来源：稀有金属：英文版 年份：1989
Five kinds of InGaAsP/InP heterostructure materials grown with LPE have been measured by means of Auger electronanalysis,X-ray double-crystal diffraction,select...
[期刊论文] 作者：FU Xiaomei,ZHANG Li,WANG Dawei,
来源：天津大学学报（英文版） 年份：2011
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