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,An analytical model for nanowire junctionless SOI FinFETs with considering three-dimensional coupli
[期刊论文] 作者：Fan-Yu Liu,Heng-Zhu Liu,Bi-Wei Liu,Yu-Feng Guo,
来源：中国物理B（英文版） 年份：2016
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X-ray irradiation-induced degradation in Hf0.5Zr0.5O2 fully depleted silicon-on-insulator n-type met
[期刊论文] 作者：Yu-Dong Li,Qing-Zhu Zhang,Fan-Yu Liu,Zhao-Hao Zhang,Feng-Yuan Zhang,Hong-Bin Zhao,Bo Li,Jiang Yan,
来源：稀有金属（英文版） 年份：2021
The n-type ultrathin fully depleted silicon-on-in-sulator(FDSOI)metal-oxide-semiconductor field-effect transistors(MOSFETs),with a Hf0.5Zr0.5O2 high dielectric permittivity(high-k)dielectric as gate insulator,were fabri-cated.The total ioni......
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