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[期刊论文] 作者：谢刚,Edward Xu,Niloufar Hashemi,张波,Fred Y.Fu,Wai Tung Ng,,
来源：Chinese Physics B 年份：2012
A reduced surface electric field in an AlGaN/GaN high electron mobility transistor(HEMT) is investigated by employing a localized Mg-doped layer under the two-d...
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