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GaN-based p–i–n ultraviolet photodetectors with a thin p-type GaN layer on patterned sapphire substr
[期刊论文] 作者：HongjuanHuang,DaweiYan,GuoshengWang,FengXie,GuofengYang,ShaoqingXiao,XiaofengGu,
来源：ChineseOpticsLetters 年份：2014
We study the performance of GaN-based p–i–n ultraviolet (UV) photodetectors (PDs) with a 60 nm thin p-type contact layer grown on patterned sapphire substrate (PSS). The PDs on PSS exhibit a low dark current of ~2 pA under a bias of -5 V,......
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