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Gate-tunable linear magnetoresistance in molybdenum disulfide field-effect transistors with graphene
[期刊论文] 作者：Hao Huang,Hongming Guan,Meng Su,Xiaoyue Zhang,Yuan Liu,Chuansheng Liu,Zhihong Zhang,Kaihui Liu,Lei Liao,
来源：纳米研究（英文版） 年份：2021
Molybdenum disulfide (MoS2) holds great promise as atomically thin two-dimensional (2D) semiconductor for future electronics and opto-alectronics.In this report...
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