搜索筛选:
搜索耗时2.8656秒,为你在为你在102,285,761篇论文里面共找到 13 篇相符的论文内容
发布年度:
,Structural feature and electronic property of an (8, 0)carbon-silicon carbide nanotube heterojuncti
[期刊论文] 作者：Liu Hong-Xia,Zhang He-Ming,Hu Hui-Yong,Song Jiu-Xu,
来源：中国物理B（英文版） 年份：2009
A supercell of a nanotube heterojunction formed by an (8, 0) carbon nanotube (CNT) and an (8, 0) silicon carbide nanotube (SiCNT) is established, in which 96 C...
[期刊论文] 作者：Xu Xiao-Bo,Zhang He-Ming,Hu Hui-Yong,Ma Jian-Li,
来源：中国物理B（英文版） 年份：2011
...
,Substrate bias effects on collector resistance in SiGe heterojunction bipolar transistors on thin f
[期刊论文] 作者：Xu Xiao-Bo,Zhang He-Ming,Hu Hui-Yong,Qu Jiang-Tao,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Jiang Tao,Zhang He-Ming,Wang Wei,Hu Hui-Yong,Dai Xian-Ying,
来源：中国物理（英文版） 年份：2006
A novel vertical stack heterostructure CMOSFET is investigated, which is structured by strained SiGe/Si with a hole quantum well channel in the compressively st...
[期刊论文] 作者：Song Jian-Jun,Zhang He-Ming,Hu Hui-Yong,Dai Xian-Ying,Xuan Rong-Xi,
来源：中国物理B（英文版） 年份：2007
The feature of conduction band (CB) of Tensile-Strained Si(TS-Si) on a relaxed Si1-xGex substrate is systematically investigated, including the number of equiva...
,Analytical base-collector depletion capacitance in vertical SiGe heterojunction bipolar transistors
[期刊论文] 作者：Xu Xiao-Bo,Zhang He-Ming,Hu Hui-Yong,Ma Jian-Li,Xu Li-Jun,
来源：中国物理B（英文版） 年份：2011
...
,Weak avalanche multiplication in SiGe heterojunction bipolar transistors on thin film silicon-on-in
[期刊论文] 作者：Xu Xiao-Bo,Zhang He-Ming,Hu Hui-Yong,Li Yu-Chen,Qu Jiang-Tao,
来源：中国物理B（英文版） 年份：2011
...
[期刊论文] 作者：Qin Shan-Shan,Zhang He-Ming,Hu Hui-Yong,Dai Xian-Ying,Xuan Rong-Xi,Shu Bin,
来源：中国物理B（英文版） 年份：2010
Based on the analysis of vertical electric potential distribution across the dual-channel strained p-type Si/strained Si1-xGexrelaxd Si1-yGey(s-Si/s-SiGe/Si1-yG...
[期刊论文] 作者：LI Yu-chen,ZHANG He-ming,HU Hui-yong,ZHANG Yu-ming,WANG Bin,ZHOU Chun-yu,
来源：中南大学学报（英文版） 年份：2014
...
Physically based analytical model for plateau in gate C-V characteristics of strained silicon pMOSFE
[期刊论文] 作者：WANG Bin,ZHANG He-ming,HU Hui-yong,ZHANG Yu-ming,ZHOU Chun-yu,LI Yu-chen,
来源：中南大学学报（英文版） 年份：2013
...
[期刊论文] 作者：Wang Bin,Zhang He-Ming,Hu Hui-Yong,Zhang Yu-Ming,Zhou Chun-Yu,Wang Guan-Yu,Li Yu-Chen,
来源：中国物理B（英文版） 年份：2013
...
[期刊论文] 作者：Li Yu-Chen,Zhang He-Ming,Zhang Yu-Ming,Hu Hui-Yong,Wang Bin,Lou Yong-Le,Zhou Chun-Yu,
来源：中国物理B（英文版） 年份：2013
...
[期刊论文] 作者：Hu Hui-Yong,Zhang He-Ming,Dai Xian-Ying,Jia Xin-Zhang,Cui Xiao-Ying,Wang Wei,Ou Jian-Feng,Wang Xi-Yuan,
来源：中国物理（英文版） 年份：2005
The transit time through collector junction depletion-layer is an important parameter that influences AC gain and frequency performance. In SiGe heterojunction...
相关搜索：
