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,Study of total ionizing dose radiation effects on enclosed gate transistors in a commercial CMOS te
[期刊论文] 作者：Li Dong-Mei,Wang Zhi-Hua,Huangfu Li-Ying,Gou Qiu-Jing,
来源：中国物理B（英文版） 年份：2007
This paper studies the total ionizing dose radiation effects on MOS (metal-oxide-semiconductor) transistors with normal and enclosed gate layout in a standard c...
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